Microchip Technology 2N3440U4 双极型晶体管 BJTs 250V 1A 800mW 功率 BJT 表面贴装

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

DC Current Gain hFE Max: 160

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 300 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 250 V

Collector-Emitter Saturation Voltage: 500 mV