Microchip Technology 2N3500 双极型晶体管 BJTs 150V 300mA 1W NPN 小信号 BJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 120 at 150 mA, 10 V

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 150 V

Maximum DC Collector Current: 300 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 150 mA, 10 V

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 400 mV