Microsemi JAN2N3439 双极型晶体管 BJTs - 350V 1A 800mW 功率双极型晶体管 THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

DC Current Gain hFE Max: 160 at 20 mA, 10 V

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 450 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 20 mA, 10 V

Collector- Emitter Voltage VCEO Max: 350 V

Collector-Emitter Saturation Voltage: 500 mV