Microsemi Jantx2N1893 双极型晶体管 BJTs - 功率双极型晶体管

Technology: Si

Unit Weight: 5.217 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

DC Current Gain hFE Max: 120 at 150 mA, 10 VDC

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 120 V

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 150 mA, 10 VDC

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 5 V