Microsemi Jantxv2N6032 双极晶体管 90V NPN 功率双极晶体管 THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 140 W

DC Current Gain hFE Max: 50

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 50 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 90 V