快速支持
直接联系认证专家
Fall Time: 14 ns
Rise Time: 14 ns
Technology: SiC
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 44 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 202 W
Vgs - Gate-Source Voltage: - 10 V, + 22 V
Typical Turn-On Delay Time: 30 ns
Typical Turn-Off Delay Time: 15 ns
Id - Continuous Drain Current: 36 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 120 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2.9 V
