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Width: 2.6 mm
Height: 1.6 mm
Length: 4.6 mm
Technology: Si
Unit Weight: 1 g
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 550 mW
DC Current Gain hFE Max: 300 at 100 mA, 2 V
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 300 at 100 mA, 2 V, 300 at 500 mA, 2 V, 300 at 1 A, 2 V, 150 at 2 A, 2 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 380 mV
