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Technology: SiGe
Unit Weight: 0.634 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar Wideband
Operating Frequency: 53 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 160 mW
Emitter- Base Voltage VEBO: 1.3 V
Continuous Collector Current: 5 mA
Maximum DC Collector Current: 30 mA
Maximum Operating Temperature: + 125 C
DC Collector/Base Gain hfe Min: 205
Collector- Emitter Voltage VCEO Max: 3 V
