onsemi 2N5686G 双极型晶体管 BJTs 50A 80V 300W NPN

Width: 26.67 mm

Height: 8.51 mm

Length: 38.86 mm

Technology: Si

Unit Weight: 13.835 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 300 W

Gain Bandwidth Product fT: 2 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 50 A

Maximum DC Collector Current: 50 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1 V