onsemi 2SC5707-TL-E 双极型晶体管 BIP NPN 8A 50V

Technology: Si

Unit Weight: 281.640 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

Gain Bandwidth Product fT: 330 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 8 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 160 mV