onsemi 2SC6096-TD-E 双极型晶体管 BIP NPN 2A 100V

Technology: Si

Unit Weight: 51.500 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 3.5 W

DC Current Gain hFE Max: 600 at 100 mA, 5 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6.5 V

Collector- Base Voltage VCBO: 120 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 300 at 100 mA, 5 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 100 mV