onsemi AFGHL40T120RWD-STD IGBT晶体管 IGBT - 汽车级 1200 V 40A

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 468 W

Gate-Emitter Leakage Current: +/- 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 80 A