onsemi BD136G 双极型晶体管 BJTs 1.5A 45V 12.5W PNP

Width: 2.66 mm

Height: 11.04 mm

Length: 7.74 mm

Technology: Si

Unit Weight: 212 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 12.5 W

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 45 V

Continuous Collector Current: 1.5 A

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 25

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 500 mV