onsemi BD441G 双极型晶体管 4A 80V 36W NPN

Width: 2.66 mm

Height: 11.04 mm

Length: 7.74 mm

Technology: Si

Unit Weight: 680 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 36 W

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 800 mV