onsemi FCD260N65S3 MOSFETs SUPERFET3 260MOHM TO252

Fall Time: 12 ns

Rise Time: 18 ns

Technology: Si

Unit Weight: 360 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel SuperFET III MOSFET

Qg - Gate Charge: 24 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 90 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 49 ns

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 260 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V