onsemi FDD6760A Trans MOSFET N-CH Si 25V 27A 3-Pin(2+Tab) DPAK T/R

Type: Power MOSFET

Vgs(th): 3 V

Vgs (Max): 20V

Gate Charge (Qg): 62nC

Power consumption: 3.7|65W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 25V

Continuous drain current: 27A/50A

Input Capacitance (Ciss): 3170pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 3.2mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet