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Technology: Si
Unit Weight: 7.700 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 550 mW
DC Current Gain hFE Max: 800, 500
Gain Bandwidth Product fT: 540 MHz, 520 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 40 V, 30 V
Continuous Collector Current: 700 mA, - 700 mA
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 300, 200
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 85 mV, 110 mV
