onsemi MJE15032G 双极型晶体管 BJTs 8A 250V 50W NPN

Width: 4.83 mm

Height: 15.75 mm

Length: 10.53 mm

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 50 W

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 250 V

Continuous Collector Current: 8 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 250 V

Collector-Emitter Saturation Voltage: 500 mV