onsemi NDDP010N25AZ-1H MOSFET

Vgs(th): 4.5 V

Vgs (Max): 30V

Gate Charge (Qg): 16nC

Power consumption: 1|52W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 250V

Continuous drain current: 10A

Input Capacitance (Ciss): 980pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 420mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V