onsemi NGTB75N65FL2WAG IGBT晶体管 IGBT，650 V场停止II，75 A

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 536 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 200 A