onsemi NSV40302PDR2G 双极晶体管 BJTs COMP 40V NPN/PNP LO

Technology: Si

Unit Weight: 72 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 653 mW

DC Current Gain hFE Max: 230

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V, 7 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 82 mV, 135 mV