onsemi NTH4L040N120M3S 碳化硅 (SiC) MOSFET - EliteSiC，40 毫欧，1200 V，M3S，TO-247-4L 碳化硅 (SiC) MOSFET - EliteSiC，40 毫欧，1200 V，M3S，TO-247-4L

Fall Time: 10 ns

Rise Time: 15 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 70 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 329 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 51 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 13 S

Rds On - Drain-Source Resistance: 52 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.4 V