onsemi NTLJS4114NT1G MOSFET NFET 2X2 30V 7.8A 33毫欧

Width: 2 mm

Height: 0.75 mm

Length: 2 mm

Fall Time: 9 ns

Rise Time: 9 ns

Technology: Si

Unit Weight: 5 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 700 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 S

Rds On - Drain-Source Resistance: 20.3 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 400 mV