PANJIT PSK01SICSBD650_B0_00001 碳化硅肖特基势垒二极管 650V 碳化硅肖特基二极管样品套件 用于功率因数校正电路

Features: High Surge Current Capability, Low Conduction Loss, PTC on VF, Temperature Independent Switching Behavior, Zero Reverse Recovery

Unit Weight: 590 g

Component Type: Schottky Barrier Diode

Description/Function: 650 V SiC SBD Sample Kit for PFC Circuit. This Kit Includes Total Number of 26 Pieces