快速支持
直接联系认证专家
Gain: 21.8 dB
Technology: GaN
Unit Weight: 7.792 g
Output Power: 178 W
Configuration: Single Triple Drain
Mounting Style: SMD/SMT
Development Kit: QPD1013EVB01
Transistor Type: HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 67 W
Maximum Drain Gate Voltage: 65 V
Maximum Operating Frequency: 2.7 GHz
Minimum Operating Frequency: 1.2 GHz
Id - Continuous Drain Current: 1.7 A
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
