ROHM Semiconductor BSS84AHZGT116 MOSFETs AECQ

Fall Time: 56 ns

Rise Time: 22 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: Trench MOSFET

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 350 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 140 ns

Id - Continuous Drain Current: 230 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.2 S

Rds On - Drain-Source Resistance: 5.3 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V