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Width: 1.2 mm
Height: 0.5 mm
Length: 1.6 mm
Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 150 mW
DC Current Gain hFE Max: 560 at 1 mA, 6 V
Gain Bandwidth Product fT: 180 MHz, 260 MHz
Emitter- Base Voltage VEBO: 6 V, 7 V
Collector- Base Voltage VCBO: 15 V, 60 V
Continuous Collector Current: 150 mA, - 500 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120 at 1 mA, 6 V
Collector- Emitter Voltage VCEO Max: 12 V, 50 V
Collector-Emitter Saturation Voltage: 250 mV, 400 mV
