ROHM Semiconductor QH8MB5TCR MOSFETs TSMT8 双通道 40V

Fall Time: 2.7 ns, 43 ns

Rise Time: 4.4 ns, 18 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 3.5 nC, 17.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5 ns, 9.2 ns

Typical Turn-Off Delay Time: 11 ns, 82 ns

Id - Continuous Drain Current: 4.5 A, 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.7 S, 5 S

Rds On - Drain-Source Resistance: 44 mOhms, 41 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V