ROHM Semiconductor QS8M11TCR MOSFETs 传输 MOSFET N/P沟道 30V 3.5A/3A 8针

Technology: Si

Unit Weight: 10 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 3.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.5 W

Id - Continuous Drain Current: 3.5 A

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V