ROHM Semiconductor QSZ4TR 双极型晶体管 BJTs - 双极型晶体管 ISO TRANSISTORDIODE GEN PURP

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.25 W

DC Current Gain hFE Max: 680 at 200 mA, 2 V

Gain Bandwidth Product fT: 280 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at 200 mA, 2 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 370 mV