ROHM Semiconductor RD3G08BBJHRBTL P沟MOSFET -40V -80A，TO-252（DPAK），汽车用功率MOSFET

Fall Time: 154 ns

Rise Time: 22 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 145 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 142 W

Vgs - Gate-Source Voltage: - 20 V, + 5 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 218 ns

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 21 S

Rds On - Drain-Source Resistance: 4.9 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V