ROHM Semiconductor RGT8NS65DGTL IGBT晶体管 650V 4A IGBT停止沟槽

Technology: Si

Unit Weight: 2 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 65 W

Operating Temperature Range: - 40 C to + 175 C

Continuous Collector Current: 4 A

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 8 A