ROHM Semiconductor RGTH80TS65DGC11 IGBT晶体管 650V 40A IGBT停止沟槽

Technology: Si

Unit Weight: 38 g

Mounting Style: Through Hole

Pd - Power Dissipation: 234 W

Operating Temperature Range: - 40 C to + 175 C

Continuous Collector Current: 40 A

Gate-Emitter Leakage Current: +/- 200 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 70 A

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 70 A