ROHM Semiconductor RSR010N10FHATL N沟道功率MOSFET 100V ±1A 3引脚 TSMT 卷带盘

No. of Pins: 3

Channel Type: N Channel

Qualification: AEC-Q101

Power Dissipation: 1

Transistor Mounting: Surface mount

Transistor Case Style: SOT-346T

Drain Source Voltage Vds: 100

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 1

Drain Source On State Resistance: 520

Gate Source Threshold Voltage Max: 2.5

Datasheet