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Width: 1.7 mm
Height: 0.77 mm
Length: 2 mm
Technology: Si
Unit Weight: 8.500 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 8 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1 W
Id - Continuous Drain Current: 3 A
Rds On - Drain-Source Resistance: 50 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
