ROHM Semiconductor SCH2080KEC MOSFET

Vgs(th): 4 V

Vgs (Max): +22|-6V

Gate Charge (Qg): 106nC

Power consumption: 262W

Technology System: SiCFET(Silicon Carbide)

Drain to Source voltage: 1200V

Continuous drain current: 40A

Input Capacitance (Ciss): 1850pF

Operating temperature range: 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 117mOhm

Drive Voltage (Max Rds On, Min Rds On): 18V

Datasheet