ROHM Semiconductor SCT4026DRC15 MOSFET的TO247 750V 56A N-CH 碳化硅

Fall Time: 13 ns

Rise Time: 22 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 94 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 176 W

Vgs - Gate-Source Voltage: - 4 V, + 21 V

Typical Turn-On Delay Time: 9.5 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 56 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 16 S

Rds On - Drain-Source Resistance: 26 mOhms

Vds - Drain-Source Breakdown Voltage: 750 V

Vgs th - Gate-Source Threshold Voltage: 4.8 V