ROHM Semiconductor SH8K22TB1 MOSFETs N沟+N沟 45V 4.5A MOSFET

Technology: Si

Unit Weight: 83 mg

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 3.5 S

Rds On - Drain-Source Resistance: 46 mOhms

Vds - Drain-Source Breakdown Voltage: 45 V