ROHM Semiconductor SH8K3TB1 MOSFETs N沟+N沟 30V 7A MOSFET

Technology: Si

Unit Weight: 83 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 8.4 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Id - Continuous Drain Current: 7 A

Rds On - Drain-Source Resistance: 17 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V