ROHM Semiconductor UT6JB5TCR MOSFETs DFN2020 P CHAN 40V

Fall Time: 18 ns

Rise Time: 8.5 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P - Channel

Qg - Gate Charge: 6.2 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 7.4 ns

Typical Turn-Off Delay Time: 42 ns

Id - Continuous Drain Current: 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 122 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1 V