ROHM Semiconductor UT6MA3TCR MOSFETs 20V N沟+P沟 硅MOSFET

Fall Time: 5.5 ns, 30 ns

Rise Time: 5.9 ns, 36 ns

Technology: Si

Unit Weight: 771.020 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 4 nC, 6.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 7.8 ns, 9 ns

Typical Turn-Off Delay Time: 24 ns, 50 ns

Id - Continuous Drain Current: 5.5 A, 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.1 S, 4.1 S

Rds On - Drain-Source Resistance: 42 mOhms, 59 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V