STMicroelectronics SCTW70N120G2V SiC MOSFETS 碳化硅功率MOSFET 1200 V，典型21 mOhm，91 A

Technology: SiC

Unit Weight: 4.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 150 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 547 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Id - Continuous Drain Current: 91 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 21 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.9 V