STMicroelectronics SCTWA60N120G2-4 SiC MOSFETS 碳化硅功率MOSFET 1200 V，典型35 mOhm，60 A

Fall Time: 14 ns

Rise Time: 15 ns

Compliance: Done

Technology: SiC

Unit Weight: 6.080 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 94 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 388 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 52 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3 V