STMicroelectronics STD10NF30 汽车级N沟道300V，0.28欧姆典型值10A MESH OVERLAY功率MOSFET

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 23 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 103 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 330 mOhms

Vds - Drain-Source Breakdown Voltage: 300 V

Vgs th - Gate-Source Threshold Voltage: 2 V