STMicroelectronics STD40P8F6AG 汽车级P沟道MOSFET -80 V，典型18.5 mOhm -40 A STripFET F6 功率MOSFET

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 73 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 28 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 4 V