STMicroelectronics STD4N52K3 SuperMesh3 功率 MOSFET N 沟道 525V 1.2 欧姆 4.4 A SuperMESH3

Fall Time: 14 ns

Rise Time: 7 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 11 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 45 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 21 ns

Id - Continuous Drain Current: 3.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.6 Ohms

Vds - Drain-Source Breakdown Voltage: 525 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V