STMicroelectronics STD5N52U 功率MOSFET N沟道 525 V 4.4 A DPAK TO-220F

Fall Time: 15 ns

Rise Time: 13.6 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 16.9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 70 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 11.4 ns

Typical Turn-Off Delay Time: 23.1 ns

Id - Continuous Drain Current: 4.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.28 Ohms

Vds - Drain-Source Breakdown Voltage: 525 V

Vgs th - Gate-Source Threshold Voltage: 3 V