STMicroelectronics STD65N160M9 MOSFET N沟道 650 V，典型132 mOhm，17 A MDmesh M9 功率MOSFET

Fall Time: 7 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 32 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 106 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 160 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.2 V