STMicroelectronics STD7N65M6 MOSFET N沟道 650 V，0.91 欧姆典型值 5 A MDmesh M6 功率MOSFET

Fall Time: 12.4 ns

Rise Time: 4.5 ns

Technology: Si

Unit Weight: 360 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6.9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 60 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6.5 ns

Typical Turn-Off Delay Time: 21.4 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 990 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.25 V