STMicroelectronics STFI13N65M2 MDmesh M2 N沟道 650 V，典型值0.37欧姆，10 A MDmesh M2 功率MOSFET，I2PAKFP封装

Width: 10.4 mm

Height: 4.6 mm

Length: 16.4 mm

Fall Time: 12 ns

Rise Time: 7.8 ns

Technology: Si

Unit Weight: 2.387 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 17 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 25 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 38 ns

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 430 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V